AVS 65th International Symposium & Exhibition
    Applied Surface Science Division Monday Sessions
       Session AS-MoA

Paper AS-MoA8
In-situ Characterisation of Graphene using combined XPS and Raman Spectroscopy: Removal of Polymer Residue by Ar Gas Cluster Ion Beams

Monday, October 22, 2018, 3:40 pm, Room 204

Session: Multitechnique Applications-When More techniques are Better than One
Presenter: Barry Brennan, National Physical Laboratory, UK
Authors: B. Brennan, National Physical Laboratory, UK
P. Mack, Thermo Fisher Scientific, UK
A. Centeno, Graphenea, Spain
A. Zurutuza, Graphenea, Spain
A.J. Pollard, National Physical Laboratory, UK
Correspondent: Click to Email

The transfer of chemical vapour deposition grown 2D materials to a relevant substrate material typically involves deposition of a thin polymer layer, usually PMMA, as a handle to transport the 2D material, which is then dissolved in solvent. Any polymer residue is then typically further reduced in a thermal annealing step, designed to break down the polymer chain and remove it from the surface. However, this is rarely fully effective, with trace PMMA residue usually detected. This can then affect the electrical and physical properties of the 2D layer, and prevent consistency in the final material. Recently, a number of mechanisms have been explored to further improve the quality of the transferred layer, from introducing further solvent and annealing steps, to the use of plasmas, and argon gas cluster ion beams (GCIB), to remove any remaining residue. In this study, we explore in detail the use of size selected argon GCIBs to clean polymer residue from a CVD-grown graphene surface. Due to the distribution of the charge applied to the cluster over the individual argon atoms, the energy per atom can be tuned to <0.5 eV/atom, significantly below the bond strength of the graphene, but sufficiently energetic to remove polymeric material.

In order to characterise this, a combination of techniques are needed to thoroughly confirm the removal of polymer material, as well as show there is no impact to the underlying graphene. Ideally these techniques would be in-situ and confocal in nature in order to prevent modifications to the sample surface after cleaning, as well as provide confidence in the measurements. To this end, in this study we used the Thermo Scientific Nexsa X-Ray Photoelectron Spectrometer (XPS) system which allowed us to carry out correlative XPS, REELS and Raman spectrometry in-situ from the same area of a graphene sample during GCIB cleaning. This meant we could examine changes in the chemical composition of the graphene surface as polymer material was removed, while monitoring changes in the Raman spectra to determine whether any defects were being generated in the graphene during the cleaning process. The changes in the sample were further probed using 3D time of flight secondary ion mass spectrometry (ToF-SIMS) imaging, to clearly show the removal of polymer materials during GCIB cleaning, while leaving the underlying graphene layer intact. Through the combination of these measurements, we are able to determine that by keeping the energy per argon atom less than 1 eV, we can prevent the introduction of defects to the graphene layer, as well as significantly decrease the level of contamination present on the graphene surface.