| AVS 65th International Symposium & Exhibition | |
| Applied Surface Science Division | Thursday Sessions |
| Session AS+NS-ThA |
| Session: | Profiling, Imaging and Other Multidimensional Pursuits |
| Presenter: | Hong Piao, FUJIFILM Planar Solutions, LLC, FUJIFILM Electronic materials USA., Inc. |
| Authors: | H. Piao, FUJIFILM Planar Solutions, LLC, FUJIFILM Electronic materials USA., Inc. Y.N. Liang, FUJIFILM Planar Solutions, LLC, FUJIFILM Electronic materials USA., Inc. J. McDonough, FUJIFILM Planar Solutions, LLC, FUJIFILM Electronic materials USA., Inc. C. Ballesteros, FUJIFILM Planar Solutions, LLC, FUJIFILM Electronic materials USA., Inc. E. Turner, FUJIFILM Planar Solutions, LLC, FUJIFILM Electronic materials USA., Inc A. Mishra, FUJIFILM Planar Solutions, LLC, FUJIFILM Electronic materials USA., Inc. R. Wen, FUJIFILM Planar Solutions, LLC, FUJIFILM Electronic materials USA., Inc. |
| Correspondent: | Click to Email |
Chemical mechanical planarization/polishing (CMP) is a chemical reaction assisted mechanical polishing process in the semiconductor manufacturing industry to remove overburden material or specific layers in the film stacking and to planarize the topography at the patterned wafer surface. Although the basic principles of CMP are understood, thorough understanding of surface chemical processes which occur during polishing is still lacking, especially the chemistry at the interface of the wafer/slurry/pad. Investigations aimed at understanding fundamental mechanisms usually employ electrochemical techniques. Surface analysis methods remain rather under-utilized in this field, especially when taking into account the explosive growth of these surface techniques for the analysis of “nano-structured” films in other research fields.
FUJIFILM Planar Solutions (PLNR) is a market leader for metals and dielectric CMP slurries. Our in-house XPS and ToF-SIMS surface analysis tools have greatly enhanced our capabilities in analyzing and understanding surface reactions, their mechanism, and fundamental science and engineering behind the slurry wafer interaction at the interface during CMP.
The goal of this presentation is to review selected results provided by advanced surface analysis tools combined with other complementary testing methods. Examples describing CMP characterization are given in two technological areas that are growing in importance: (1) Cu and Co CMP and (2) Defectivity in front end of line polishing involving dielectrics. We also pay particular attention to show how the recent improvements in instrumentation could open new opportunities and fundamental understanding of how surface analyses can enable improvements in slurry design for CMP, thus leading to the development of next-generation advanced CMP slurries and processes.