Paper 2D-ThP3
Growth Phenomena and Mechanism of MoS2 Formed by Conventional Chemical Vapor Deposition

Thursday, October 25, 2018, 6:00 pm, Room Hall B

In recent years, transition metal dichalcogenide (TMDC) compound, have heen studied as a platform for next generation semiconductor devices. One of the most representative two-dimensional TMDC materials, MoS2 is applied as a device as well as various synthesis methods are known, including chemical vapor deposition. However, in-depth research on the synthesis process and the mechanism of the variable has not been done yet. Therefore, in this study synthesis of single layer MoS2 by using conventional chemical vapor deposition, as MoO3 and sulfur powder, we observe and discuss the synthesized crystal shape on the substrate, according to the distance of sulfur and MoO3. The synthesized nano-crystals were characterized by optical microscopy (OM), x-ray diffraction (XRD), raman spectroscopy. Fig. 1. shows the OM-image and raman spectra of synthesized MoS2, MoO2 crystals on S1 and S2 substrate, respectively. MoS2 crystals are synthesized on the S1 substrate close to the sulfur source, MoO2 crystals are synthesized on the S2 substrate. From these results, we were able to studies the mechanism of MoS2 synthesis. In the synthesis of MoS2, using a MoO3 and sulfur powder, the synthesis mechanism was shown as a schematic of the various experiments and in-depth understanding.

Therefore, we have demonstrated that the importance of MoO2 formation as the intermediate phase in MoS2 synthesis using MoO3 and sulfur powder. And then, the MoS2 synthesis mechanism was easier to understand through the schematic illustration.