AVS 63rd International Symposium & Exhibition
    Plasma Science and Technology Wednesday Sessions

Session PS+TF-WeM
Atomic Layer Etching

Wednesday, November 9, 2016, 8:00 am, Room 104C
Moderator: Eric A. Hudson, Lam Research Corporation


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am PS+TF-WeM1 Invited Paper
Selective Cyclic Plasma Etching of Thin Films in Two Heating Way, Ion Bombardment and Infrared Irradiation.
M. Izawa, Hitachi High-Technologies Corp., Japan, Kazunori Shinoda, N. Miyoshi, H. Kobayashi, Hitachi, Japan, N. Yasui, M. Tanaka, Y. Sonoda, K. Kuwahara, Hitachi High-Technologies Corp., Japan, K. Ishikawa, M. Hori, Nagoya University, Japan
8:40am PS+TF-WeM3
Concurrent Engineering of Atomic Layer Etch Patterning Processes Involving Oxide and Nitride Materials
Mingmei Wang, P. Chan, TEL Technology Center, America, LLC, P. Ventzek, Tokyo Electron America, A. Ranjan, TEL Technology Center, America, LLC
9:00am PS+TF-WeM4
System Trade-offs of Atomic Layer Etching (ALE) of High Aspect Ratio 3D Features
Chad Huard, University of Michigan, Y. Zhang, S. Sriraman, A. Paterson, Lam Research Corp., M.J. Kushner, University of Michigan
9:20am PS+TF-WeM5 Invited Paper
Molecular Dynamics Simulations of Atomic Layer Etching
Jun-Chieh Wang, S. Rauf, J.A. Kenney, L. Dorf, K.S. Collins, Applied Materials, Inc.
11:00am PS+TF-WeM10
Isotropic Atomic Layer Etching of Titanium Nitride Using Formation and Desorption of Ammonium Salt
Kazunori Shinoda, N. Miyoshi, H. Kobayashi, M. Kurihara, Hitachi, Japan, S. Sakai, M. Izawa, Hitachi High-Technologies, Japan, K. Ishikawa, M. Hori, Nagoya University, Japan
11:20am PS+TF-WeM11
Organic Etchants Toward Atomic Layer Etching of Magnetic Metals
Nicholas Altieri, L. Minardi, E.L. Chen, J.P. Chang, University of California Los Angeles
11:40am PS+TF-WeM12
Conformality of Thermal Al2O3 Atomic Layer Etching in High Aspect Ratio Structures
Amy Marquardt, H. Sun, University of Colorado Boulder, S.M. George, University of Colorado at Boulder
12:00pm PS+TF-WeM13
Thermal Atomic Layer Etching of Crystalline Aluminum Nitride Using Sequential, Self-Limiting HF and Sn(acac)2 Reactions and Enhancement by H2 and Ar Plasmas
Nicholas Johnon, H. Sun, K. Sharma, S.M. George, University of Colorado at Boulder