| AVS 63rd International Symposium & Exhibition | |
| Electronic Materials and Photonics | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 1:40pm | EM-MoA1 Invited Paper ALD Gate Dielectrics for GaN HEMTs Andrea Corrion, HRL Laboratories, LLC |
| 2:20pm | EM-MoA3 Advances in High-k Dielectric Integration with Ga-polar and N-polar GaN Charles Eddy, Jr., U.S. Naval Research Laboratory, C.R. English, University of Wisconsin, V.D. Wheeler, U.S. Naval Research Laboratory, D.I. Shahin, University of Maryland College Park, N.Y. Garces, U.S. Patent & Trade Office, A. Nath, J.K. Hite, M.A. Mastro, T.J. Anderson, U.S. Naval Research Laboratory |
| 2:40pm | EM-MoA4 Effects of Surface Cleaning and Different Metals as Schottky Contacts to Bulk and Epitaxial β-Ga2O3 Yao Yao, R. Gangireddy, J. Kim, Carnegie Mellon University, T. Salagaj, N. Sbrockey, G.S. Tompa, Structured Materials Industries, Inc., K.K. Das, JBP Materials, R.F. Davis, L.M. Porter, Carnegie Mellon University |
| 3:00pm | EM-MoA5 Invited Paper Deep Traps in Wide Bandgap Semiconductors: From GaN to beta-Ga2O3 Steven Ringel, A. Arehart, E. Farzana, Z. Zhang, The Ohio State University, E. Ahmadi, Y. Oshima, J. Speck, University of California at Santa Barbara |
| 4:00pm | EM-MoA8 Study of Oxygen and Moisture Effect on Device Instability of Bottom-Gate ZnO Transistors with Sol-Gel Derived Channel Layers Kosala Yapabandara, M. Park, M.C. Hamilton, D.-J. Kim, V. Mirkhani, S. Wang, M. Sultan, B. Ozden, M.P. Khanal, S. Uprety, Y. Chung, Auburn University, M.H. Sk, Qatar University, Qatar |
| 4:20pm | EM-MoA9 Depth Dependent Modification of Optical Constants Arising from H+ Implantation in n-type 4H-SiC Measured using Coherent Acoustic Phonons Andrey Baydin, H. Krzyzanowska, Vanderbilt University, M. Dhanunjaya, S.V.S. Nageswara Rao, University of Hyderabad, India, J.L. Davidson, Vanderbilt University, L.C. Feldman, Vanderbilt University, Rutgers University, N.H. Tolk, Vanderbilt University |
| 4:40pm | EM-MoA10 Electrical and Thermal Stability of ALD-TiN Schottky Gates for AlGaN/GaN HEMTs D.I. Shahin, University of Maryland College Park, Travis Anderson, V.D. Wheeler, M.J. Tadjer, A.D. Koehler, K. Hobart, C.R. Eddy, Jr., F. Kub, U.S. Naval Research Laboratory, A. Christou, University of Maryland College Park |
| 5:00pm | EM-MoA11 Spectroscopic Photo Current Voltage Measurements to Investigate Non-uniform Defect Distributions in AlGaN/GaN HEMT Hetererostructures Burcu Ozden, M.P. Khanal, C. Yang, L. Shen, V. Mirkhani, K. Yapabandara, M. Park, Auburn University |