| AVS 63rd International Symposium & Exhibition | |
| Electronic Materials and Photonics | Monday Sessions |
| Session EM-MoA |
| Session: | Surface and Interface Challenges in Wide Bandgap Materials |
| Presenter: | Andrey Baydin, Vanderbilt University |
| Authors: | A. Baydin, Vanderbilt University H. Krzyzanowska, Vanderbilt University M. Dhanunjaya, University of Hyderabad, India S.V.S. Nageswara Rao, University of Hyderabad, India J.L. Davidson, Vanderbilt University L.C. Feldman, Vanderbilt University, Rutgers University N.H. Tolk, Vanderbilt University |
| Correspondent: | Click to Email |
Silicon carbide is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm-2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra shows a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.