| AVS 63rd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF1-ThM |
| Session: | Control and Modeling of Thin Film Growth and Film Characterization |
| Presenter: | Sandeep Manandhar, The University of Texas at El Paso |
| Authors: | S. Manandhar, The University of Texas at El Paso E. Rubio, The University of Texas at El Paso C.V. Ramana, The University of Texas at El Paso |
| Correspondent: | Click to Email |
Gallium oxide (Ga2O3) has garnered significant interest due numerous applications of this material in gas sensing, optoelectronic devices, transparent electronic devices, and spintronics. From optical applications point of view, Ga2O3 finds attractive applications in luminescent phosphors, antireflection coatings, and solar cells. Ga2O3 has been recognized as a deep ultraviolet transparent conducting oxide (UV–TCO), which makes the material a potential candidate for transparent electrode applications in UV optoelectronics. However, while the large band gap makes it useful for far UV applications, it is possible to tune the properties and make it suitable for visible or low-UV applications if the band gap and electrical conductivity of Ga2O3 thin films are tuned. In this context, we propose and investigate to modify the properties of Ga2O3 by selectively doping with titanium (Ti). β-Ga2O3 thin films with variable Ti content were deposited by co-sputtering of the Ga-oxide ceramic and Ti metal by varying the sputtering power applied to these targets. The effect of Ti on the crystal structure and optical properties of β-Ga2O3 thin films is significant. For low Ti-content, films crystallize in β-phase of Ga2O3. However, increased Ti content induces amorphization of the Ga2O3 thin films. Band gap values showed a corresponding shift from ~5 eV to lower side indicating that the Ti incorporation induce changes in the electronic structure. A correlation between Ti-chemistry, structure and optical properties of Ga-Ti-O films will be discussed.