Paper TF-TuM1
An Analytic Expression for Reactant Utilization in CVD and ALD Chambers

Tuesday, November 8, 2016, 8:00 am, Room 105A

Recent advances in semiconductor device performance have depended, in part, on the adoption of new materials into the fabrication process. One of the challenges introduced with these materials is cost. In particular exotic reactants for CVD and ALD processes are often quite expensive. To use these materials efficiently, deposition chambers and processes must be designed to maximize reactant utilization while maintaining good deposition uniformity and film properties. In this presentation, an analytic expression for reactant utilization will be developed for CVD and ALD processes in parallel plate stagnation flow reactors. This expression will then be used to highlight the various approaches to achieving good utilization.