Paper MN-WeM3
Ferroelectric and Piezoelectric Properties of [100]-textured PZT (52/48) Films Deposited on Pb_xTiO₃ Nano-seed Layered Platinized Silicon

Wednesday, November 9, 2016, 8:40 am, Room 102B

Lead zirconate titanate (PZT) films are used in micro electro mechanical systems (MEMS) due to the self-generating sensing, large actuation amplitude with low voltage, and compatibility to integrated circuit process. PZT films exhibit higher values of effective transverse piezoelectric coefficient (e_31,f) and effective longitudinal piezoelectric coefficient (d_33,f), compared to any other available piezoelectric materials, both of which are important properties for such applications. Further improvement in the piezoelectric coefficients of PZT films is still being investigated.

In our previous work, the effect of Pb content and solution concentration of lead titanate (Pb_xTiO₃) seed layer on the texture and electric properties of Pb_1.1(Zr_0.52,Ti_0.48)O₃ thin films (190 nm) was investigated. The results indicated that 0.02 M Pb_xTiO₃ favors (100)/(001) orientation and suppresses (111) orientation in PZT films, thereby improving the electrical properties. The optimized conditions of the seed layer were further used to prepare thicker PZT films. Seed layer of 0.02 M Pb_xTiO₃ with varying Pb content ( x= 1.0, 1.05, 1.1, 1.2) was used to prepare 1.3 µm PZT films by chemical solution deposition method . From the results, it was observed that PZT films deposited on seed layer with 1.0 Pb content exhibit maximum {100}-texture, highest remnant polarization (50.25 µC/cm²), coercive field (38.20 kV/cm), and permittivity (2086). However, maximum transverse piezoelectric coefficient of -13.3 C/m² was obtained for films with 1.05 Pb content in the seed layer. Thus use of a seed layer is a promising route to promote {100}-textured PZT films, thereby improving the electrical properties and effective transverse piezoelectric coefficient of PZT films required for actuators and/or sensors.