| AVS 63rd International Symposium & Exhibition | |
| MEMS and NEMS | Friday Sessions |
| Session MN+MS-FrM |
| Session: | Radiation Effect in Emerging Micro/Nano Structures, Devices, and Systems |
| Presenter: | Juejun Hu, Massachusetts Institute of Technology |
| Authors: | Q. Du, Massachusetts Institute of Technology B Li, University of Minnesota D. Ma, Massachusetts Institute of Technology A. Agarwal, Massachusetts Institute of Technology J. Hu, Massachusetts Institute of Technology M. Li, University of Minnesota |
| Correspondent: | Click to Email |
and accurate platforms for quantifying radiation effects in optical materials and MEMS/NEMS systems.
Our approach benefits from the high precision of optical interrogation techniques. Further, compared to
traditional capacitive or piezoelectric actuated devices, NOMS are immune to extrinsic
degradation associated with driving circuit and metal contact failure or charge-trapping in dielectrics, and
are thus ideal test vehicles to measure radiation-induced, intrinsic optical and mechanical material
property modifications. In this talk, we will discuss design, fabrication and characterization of optical and
NOMS devices based on Si, SiN and SiC materials as well as gamma-ray radiation effects in these
devices. Defect identities responsible for the observed optical and mechanical property shifts are clarified
through spectroscopy and microscopy characterization techniques to unravel the radiation damage
mechanisms in these devices.