| AVS 63rd International Symposium & Exhibition | |
| MEMS and NEMS | Friday Sessions |
| Session MN+MS-FrM |
| Session: | Radiation Effect in Emerging Micro/Nano Structures, Devices, and Systems |
| Presenter: | Philip Feng, Case Western Reserve University |
| Correspondent: | Click to Email |
We report on exploratory research effort on investigating fundamental radiation effects in resonant-mode and contact-mode microelectromechanical systems (MEMS/NEMS) enabled by silicon carbide (SiC) micro/nanostructrues. We calibrate and compare the radiation effects in a few selected MEMS/NEMS resonators – namely, SiC microdisk resonators, SiC membrane resonators, SiC-on-insulator (SiCOI) cantilever beam resonators, and resonant switches.
We focus on discovering fundamental effects of SiC MEMS/NEMS devices due to exposure to radiation sources representative of space and nuclear environments, and attaining comprehensive, in-depth understandings of how these radiations affect the key attributes and performance of the devices. The main properties and metrics include resonance frequency, quality (Q) factor, multimode responses, off-state leakage, on-current, on-voltage, switching speed, surface and nanocontact properties, reliability and lifetime, etc.
In this work, we have carefully performed experiments on extensive testing of multimode SiC MEMS/NEMS resonators and resonant switches, before and after controlled radiation exposure with designed dosage and energetic parameters of the radiation sources. Furthermore, we have done extensive computer simulation studies on the effects of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate and on SiO2, and explore the ion implantation conditions that are relevant to experimental radiation of SiC device layers.