| AVS 63rd International Symposium & Exhibition | |
| Advanced Ion Microscopy Focus Topic | Wednesday Sessions |
| Session HI-WeA |
| Session: | 10 Years of GFIS Microscopy |
| Presenter: | Philip D. Rack, The University of Tennessee Knoxville |
| Authors: | M.G. Stanford, The University of Tennessee Knoxville S. Tan, Intel Corporation R.H. Livengood, Intel Corporation B.B. Lewis, University of Tennessee Knoxville J.D. Fowlkes, Center for Nanophase Materials Sciences, Oak Ridge National Lab P.D. Rack, The University of Tennessee Knoxville |
| Correspondent: | Click to Email |
He+ and Ne+ ion beam induced nanoscale processing has been extensively studied as an alternative ion source to the standard liquid Ga+ source. While superior imaging and nanomachining resolution has been achieved, perhaps the Achilles heel of higher exposure dose nanomachining operations is the cumulative damage that occurs beneath the region of interest. To this end, we have developed a laser-assisted focused He+ and Ne+ beam induced process in which a pulsed laser photothermally facilitates the helium diffusion, and for instance silicon interstitial/vacancy recombination, and thus inhibits the amorphization and the nanobubble formation. Futhermore, we have recently studied gas-assisted and laser-gas(XeF2)-assisted He+ etching and have realized both reduced swelling as well as enhanced etch rates for titanium thin films. We will overview the processing parameters and the ion/photon/reactive gas fluxes that lead to both damage mitigation as well as laser- and gas-assisted etching.