| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM-WeM1 Tantalum Oxide Resistive Memory Devices by IAD Ronald Goeke, M. Marinella, D.R. Hughart, Sandia National Laboratories |
| 8:20am | EM-WeM2 Capacitance and Resistance Switching in HfO2 RRAM Christophe Vallee, P. Gonon, C. Mannequin, T. Wakrim, M. Saadi, LTM, Univ. Grenoble Alpes, CEA-LETI, France, A. Sylvestre, G2elab, Univ. Grenoble Alpes, France |
| 8:40am | EM-WeM3 Density Functional Theory Molecular Dynamics Simulations and Experimental Characterization of high-k/SiGe(110) and SiGe(001) Interfaces A.C. Kummel, E. Chagarov, University of California at San Diego, B. Sahu, Globalfoundries, S. Oktyabrsky, S. Madisetti, College of Nanoscale Science and Engineering, Albany-SUNY, Tobin Kaufman-Osborn, University of California at San Diego |
| 9:00am | EM-WeM4 Density-Functional Theory Molecular Dynamics Simulations of a-HfO2/Ge(100)(2x1) and a-ZrO2/Ge(100)(2x1) Interface Passivation Evgueni Chagarov, University of California at San Diego, L.M. Porter, Carnegie Mellon University, A.C. Kummel, University of California at San Diego |
| 9:20am | EM-WeM5 Role of Active and Inert Electrodes in Filament Formation in Resistive Switching Devices (RRAM) Gargi Ghosh, Virginia Tech, S.W. King, Intel Corporation, M.K. Orlowski, Virginia Tech |
| 9:40am | EM-WeM6 Neutron Induced Effects on HfOx-Based Resistive Random Access Memory Karen Hsu, T. Chang, University of Wisconsin-Madison, L. Zhao, Stanford University, R. Agasie, University of Wisconsin-Madison, Y. Nishi, Stanford University, Z. Ma, J.L. Shohet, University of Wisconsin-Madison |
| 11:00am | EM-WeM10 Relation of Low-k Interconnect Si-based Dielectric Breakdown to Resistive Switching Behavior Marius Orlowski, G. Ghosh, P. Kassalen, R. Gupta, Virginia Tech, S.W. King, Intel Corporation |
| 11:20am | EM-WeM11 Thin Film Carbon Nanofuses for Permanent Data Storage Kevin Laughlin, S. Jamieson, H. Wang, J. Bagley, T. Pearson, R.C. Davis, M.R. Linford, B.M. Lunt, Brigham Young University |
| 11:40am | EM-WeM12 Low-k/Cu Resistive 2-Level PROM Memory Collocated with CMOS Back-End Metallization Anshuman Verma, G. Ghosh, Virginia Tech, S.W. King, Intel Corporation, M.K. Orlowski, Virginia Tech |
| 12:00pm | EM-WeM13 Novel Contact Materials for Reliable Nanoelectromechanical Switches Frank Streller, G. Wabiszewski, D. Durham, R.W. Carpick, University of Pennsylvania |