| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM-WeM |
| Session: | Beyond CMOS: Resistive Switching Devices |
| Presenter: | Kevin Laughlin, Brigham Young University |
| Authors: | K. Laughlin, Brigham Young University S. Jamieson, Brigham Young University H. Wang, Brigham Young University J. Bagley, Brigham Young University T. Pearson, Brigham Young University R.C. Davis, Brigham Young University M.R. Linford, Brigham Young University B.M. Lunt, Brigham Young University |
| Correspondent: | Click to Email |
As memory elements shrink, the reliable life span of digital data is decreasing. Today we all have more data, in less stable formats. For hard drives, DVDs, and flash memory, the reliable life of the data is less than 10 years. Rewriting data extends life, but at high maintenance costs. A potential solution to this challenge is write once read many storage media where writing the data results in a permanent, irreversible change. We have been developing thin film carbon nanofuses for use as a permanent data storage medium. Carbon shows particular promise as an electronic storage medium due to its high localized bond strength resulting in high surface stability and reasonable electrical conductivity. I will present the fabrication and characterization of nanoscale fuses with feature sizes down to ~50nm. The low resistance sp2 carbon is arc deposited and then patterned using electron beam lithography and plasma etching. The electron beam resist used, HSQ, results in a glass etch mask for pattern transfer into the carbon film with an O2 plasma. The fuses were written and detected electrically, and excellent stability was observed.