| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | EM+AS+MS+SS-WeA1 Invited Paper Effects of Nitrogen and Antimony Impurities at SiO2/SiC Interfaces Patricia Mooney, Simon Fraser University, Canada |
| 3:00pm | EM+AS+MS+SS-WeA3 Hydrogen Desorption from 6H-SiC (0001) Surfaces Sean King, Intel Corporation, R. Nemanich, R. Davis, North Carolina State University |
| 3:20pm | EM+AS+MS+SS-WeA4 Chemical and Microstructural Characterization of Interfaces between Metal Contacts and β-Ga2O3 Lisa M. Porter, Y. Yao, J.A. Rokholt, R.F. Davis, Carnegie Mellon University, G.S. Tompa, N.M. Sbrockey, T. Salagaj, Structured Materials Industries, Inc. |
| 4:20pm | EM+AS+MS+SS-WeA7 Regrown InN Ohmic Contacts by Atomic Layer Epitaxy Charles Eddy, Jr., U.S. Naval Research Laboratory, N. Nepal, Sotera Defense Solutions, M.J. Tadjer, T.J. Anderson, A.D. Koehler, J.K. Hite, K.D. Hobart, U.S. Naval Research Laboratory |
| 4:40pm | EM+AS+MS+SS-WeA8 High-Temperature Characteristics of Ti/Al/Pt/Au Contacts to GaN at 600°C in Air Minmin Hou, D.G. Senesky, Stanford University |
| 5:00pm | EM+AS+MS+SS-WeA9 Invited Paper Schottky Contacts and Dielectrics in GaN HEMTs for Millimeter-Wavelength Power Amplifiers Brian Downey, Naval Research Laboratory |
| 5:40pm | EM+AS+MS+SS-WeA11 Nitrogen as a Source of Negative Fixed Charge for Enhancement Mode Al2O3/GaN Device Operation MuhammadAdi Negara, R. Long, D. Zhernokletov, P.C. McIntyre, Stanford University |
| 6:00pm | EM+AS+MS+SS-WeA12 Activation of Mg-Implanted GaN Facilitated by an Optimized Capping Structure Jordan Greenlee, B.N. Feigelson, T.J. Anderson, K.D. Hobart, F.J. Kub, Naval Research Laboratory |