AVS 62nd International Symposium & Exhibition
    2D Materials Focus Topic Monday Sessions

Session 2D+EM+NS+PS+SP+SS+TF-MoM
2D Materials: Growth and Fabrication

Monday, October 19, 2015, 8:20 am, Room 212C
Moderators: Cory Dean, Columbia University, Peide Ye, Purdue University


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am 2D+EM+NS+PS+SP+SS+TF-MoM1
Growth and FTIR Characterization of 2D Hexagonal Boron Nitride on Metal Substrates
Boris Feigelson, V.M. Bermudez, J.K. Hite, Z.R. Robinson, V.D. Wheeler, K. Sridhara, S.C. Hernández, US Naval Research Laboratory
8:40am 2D+EM+NS+PS+SP+SS+TF-MoM2
Effect of Surface Termination on the Growth of Graphene on Cu Single Crystal Substrates
Tyler Mowll, E.W. Ong, University at Albany-SUNY, P. Tyagi, GLOBALFOUNDRIES, Z.R. Robinson, College at Brockport-SUNY, C.A. Ventrice, Jr., SUNY Polytechnic Institute
9:00am 2D+EM+NS+PS+SP+SS+TF-MoM3
Thermally Annealed and Electropolished Cu Substrates for CVD Growth of 2D Materials: Graphene, h-BN and MoS2
Karthik Sridhara, Texas A&M University, B.N. Feigelson, J.K. Hite, US Naval Research Laboratory, A. Nath, George Mason University, M. Fuhrer, Monash University, Australia, D.K. Gaskill, US Naval Research Laboratory, H. Castaneda, L.O. Nyakiti, Texas A&M University
9:20am 2D+EM+NS+PS+SP+SS+TF-MoM4
In Situ Optical Diagnostics During Molybdenum Disulfide Chemical Vapor Deposition
Berc Kalanyan, J.E. Maslar, W.A. Kimes, B.A. Sperling, National Institute of Standards and Technology (NIST), R. Tieckelmann, T. Orzali, SEMATECH, R. Beams, S.J. Stranick, A.V. Davydov, National Institute of Standards and Technology (NIST)
9:40am 2D+EM+NS+PS+SP+SS+TF-MoM5 Invited Paper
Controlled Interfaces in 2D Materials
Arend van der Zande, University of Illinois at Urbana Champaign
10:40am 2D+EM+NS+PS+SP+SS+TF-MoM8
Obtaining Clean Suspended CVD Graphene: Comparative Examination of Few Transfer and Cleaning Protocols
Alexander Yulaev, National Institute of Standards and Technology (NIST), University of Maryland (UMD), G. Cheng, A. Hight Walker, National Institute of Standards and Technology (NIST), M. Leite, University of Maryland (UMD), A. Kolmakov, NIST
11:00am 2D+EM+NS+PS+SP+SS+TF-MoM9
Low-Energy Electron Microscopy of Transition Metal Dichalcogenides Prepared by Various Methods
Sergio de la Barrera, S. Satpathy, R. Feenstra, Carnegie Mellon University, S. Wu, X.D. Xu, University of Washington, S. Vishwanath, X. Liu, J. Furdyna, D. Jena, H. Xing, University of Notre Dame, Y.-C. Lin, S.M. Eichfeld, J.A. Robinson, Pennsylvania State University, P. Mende, Carnegie Mellon University
11:20am 2D+EM+NS+PS+SP+SS+TF-MoM10 Invited Paper
Atomically-Thin 2D Layers of Group IV Semiconductors
Joshua Goldberger, The Ohio State University