| AVS 62nd International Symposium & Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
| Session PS+AS+SS-WeA |
| Session: | Plasma Surface Interactions |
| Presenter: | Lawrence Overzet, University of Texas at Dallas |
| Authors: | D. Urrabazo, University of Texas at Dallas L.J. Overzet, University of Texas at Dallas |
| Correspondent: | Click to Email |
Plasma-surface interactions with semiconductors comprise a variety of interesting phenomena in addition to etching and deposition. One such phenomenon is ion induced electron emission (IIEE). IIEE has historically been viewed as extremely surface sensitive; but recent measurements have suggested that the IIEE yield from semiconductors, unlike metals, may in fact depend on the sub-surface properties as well. We investigated the effects of the surface and sub-surface properties (doping type, Fermi level, cleanliness level) on the relative IIEE yields from Si and Ge. Our measurements indicate that the relative IIEE yields did not depend on the doping type to a significant degree independent of the level of cleanliness. This result is consistent with IIEE theory. We further explored the sensitivity of the IIEE yield to surface cleanliness by making XPS and UPS measurements on the surface chemistry and approximate surface density of states (sDOS) of the semiconductors. By combining the theoretical IIEE model with the sDOS, we were able to replicate the changes in the IIEE emitted electron distribution functions due to surface cleanliness changes. Thus, we confirmed that the IIEE yield is affected by the cleanliness of the surface primarily through the change in the surface density of states.
Acknowledgement: This material is based upon work supported by the Department of Energy under Award Number DE-SC-0009308.