AVS 62nd International Symposium & Exhibition
    Plasma Science and Technology Wednesday Sessions
       Session PS+AS+SS-WeA

Invited Paper PS+AS+SS-WeA3
Plasma-Surface Interactions at Low and High Pressure

Wednesday, October 21, 2015, 3:00 pm, Room 210B

Session: Plasma Surface Interactions
Presenter: Vincent Donnelly, University of Houston
Correspondent: Click to Email

This talk will review studied of the interactions of low pressure Cl2, HBr, and O2 inductively-coupled plasmas with reactor chamber walls, with and without Si etching, using the “spinning wall” technique. The spinning wall is part of the reactor chamber walls, allowing near-real-time analysis of the composition of surface layers via Auger electron spectrometry, and determination of species desorbing off the walls by mass spectrometry. Langmuir-Hinshelwood (L-H) reactions, with surface residence times > 0.5 ms can be studied by this technique. Many commonalities were found for the different source gas plasmas. For example, when the walls were coated with SiOx or AlOx layers, A + B recombination reactions including O + O, O + Cl, Cl + Cl and H + Br are detected, provided that the surface contains a level of oxygen above some critical value. During Si etching, surfaces coated with Si-halide products tend to be less catalytic toward L-H recombination reactions, while Si-oxyhalides films formed on chamber walls when oxygen is present in the plasma are much more active in promoting L-H recombination, as well as adsorption and delayed desorption of Cl2. At most sites, O is believed to be in the inactive form of Si-O-Si. In relatively few cases, O cannot coordinate to a second Si and the active Si-O- forms. This quickly forms Si-O-A and then mobile B on the surface forms Si-O-AB, followed by desorption of AB, which could also be delayed. For all of the products observed, formation and desorption of AB is exothermic. Si etching with small oxygen addition leads to "sticky" products with a range of masses up to at least the limit of our mass spectrometer (m/e = 500) that desorb from chamber wall surfaces in ms to min after plasma exposure. Gaseous products contain -O-Si-O- linkages are prominent, in addition to Si-mono and tri-halides. In HBr-containing plasmas, products contain little or no H. Experiments have also begun to study plasma-surface interactions at atmospheric pressure. Species present within one mean free path of a quartz substrate exposed to a He jet plasma in ambient air and in a sealed chamber with gas additives are spatially resolved using a new near-field optical emission spectroscopy method.