| AVS 62nd International Symposium & Exhibition | |
| Materials Characterization in the Semiconductor Industry Focus Topic | Tuesday Sessions |
| Session MC-TuP |
| Session: | Materials Characterization in the Semiconductor Industry Poster Session (All areas) |
| Presenter: | WonJa Min, KMAC, Republic of Korea |
| Authors: | W.J. Min, KMAC, Republic of Korea K.S. Park, KMAC, Republic of Korea K.-S. Yu, KMAC, Republic of Korea S.J. Joo, KRISS, Republic of Korea Y.-S. Kim, KRISS, Republic of Korea D.W. Moon, DGIST, Republic of Korea |
| Correspondent: | Click to Email |
Using a recently developed time-of-flight (TOF) medium energy ion scattering spectrometer (MEIS), we have investigated 3D elemental composition, morphology, and atomic defect structures for As implanted Si ultrashallow junctions (USJs) and As implanted FINFET nanostructures.
As depth profiles in As/Si ultra shallow junctions (USJs) were measured by TOF-MEIS for 2 keV As implantation ion energy before and after annealing. Electrically inactive arsenic (As) complexes in silicon are investigated. In heavily As-doped Si, the As atoms segregated in the interface Si region just below the SiO2 layer are found to be in interstitial forms (Asi), while the As in the bulk Si region are found to be in the substitutional form (AsSi). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify that the As forms the <111> oriented AsSi-Si-vacancy (AsSi-VSi) complex. The Asi’s in the interface Si region are found to exist together with Si-interstitials (Sii). It is suggested that the Asi deactivation centers in the interface Si region possibly accompany Sii defects.
3D compostional distributions of As implanted FINFET structure were also analyzed with TOF-MEIS. Progresses in TOF-MEIS analysis of other nano-structured materials and devices in various nano & bio technology will be also discussed.