AVS 62nd International Symposium & Exhibition
    Helium Ion Microscopy Focus Topic Wednesday Sessions
       Session HI-WeA

Paper HI-WeA9
Understanding Device Functionality in CVD-grown MoSe2 Laterally Tuned with a Focused Helium Ion Beam

Wednesday, October 21, 2015, 5:00 pm, Room 210F

Session: GFIS Based Nanostructuring
Presenter: Vighter Iberi, Oak Ridge National Laboratory
Authors: V. Iberi, Oak Ridge National Laboratory
M.-W. Lin, Oak Ridge National Laboratory
X. Li, Oak Ridge National Laboratory
A. Ievlev, Oak Ridge National Laboratory
S. Jesse, Oak Ridge National Laboratory
S.V. Kalinin, Oak Ridge National Laboratory
A.J. Rondinone, Oak Ridge National Laboratory
D.C. Joy, Oak Ridge National Laboratory
K. Xiao, Oak Ridge National Laboratory
O.S. Ovchinnikova, Oak Ridge National Laboratory
Correspondent: Click to Email
The scalability of electronic and information technology devices depends on the ability to tune layered materials. With the recent development of CVD-growth processes for high quality 2-dimensional materials, large scale fabrication has become routine. Monolayer molybdenum diselenide (MoSe2) has become a highly attractive candidate in the fabrication of functional electronic and optoelectronic devices due to its high electron mobility. However, critical is the structuring and functional tuning of these materials, as currently being done for semiconductors. Here, we will discuss the use of focused helium ion beams in tailoring the functionality of MoSe2 electronic devices with nanometer precision. Using a helium ion beam under high dosing allows for milling and structuring of MoSe2 devices with nanometer precision and prevents ion implantation and resist contamination effects. For lower helium ion doses we are able to tune the mobility as ascertained by local transport measurements. The nature of the associated properties of this material were explored using a combination of aberration-corrected scanning transmission electron microscopy (STEM), scanning probe microscopy (SPM) and optical spectroscopy techniques that provided insight into local mechanical, electromechanical, chemical and atomic structure properties of these devices and elucidate the effect of ion beam dose on device performance. Future perspective and scalability of this approach to device fabrication will also be discussed.