AVS 62nd International Symposium & Exhibition
    Helium Ion Microscopy Focus Topic Thursday Sessions
       Session HI+AS+NS-ThA

Invited Paper HI+AS+NS-ThA1
Focused Ion Beam Circuit Edit in the Nano-Device Age: A Search for the Ultimate Nano-Ion Beam

Thursday, October 22, 2015, 2:20 pm, Room 211B

Session: Imaging and Milling with He and Ne Ion Beams
Presenter: Shida Tan, Intel Corporation
Correspondent: Click to Email

Evolution of the IC process technology continues to increase the challenge of circuit edit with smaller critical device dimensions, thinner process layers, densely packed structures, and complex device routing and design architecture. In this paper, the general approach employed, challenges encountered, and results acquired in neon application development using Zeiss NanoFAB (noble GFIS) platform for circuit edit will be presented. The merits and limitations of applying a Ne+ beam in high precision circuit edit applications will be shared with the audience.