| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM-WeA |
| Session: | Interconnects: Methods and Materials for Removing Connectivity Constraints |
| Presenter: | Zhiguo Sun, GLOBALFOUNDRIES U.S. Inc. |
| Authors: | Z. Sun, GLOBALFOUNDRIES U.S. Inc. J. Shu, GLOBALFOUNDRIES U.S. Inc. S. Srivathanakul, GLOBALFOUNDRIES U.S. Inc. H. Liu, GLOBALFOUNDRIES U.S. Inc. |
| Correspondent: | Click to Email |
With the continuous shrinkage of back end of line (BEOL) metal pitches of sub-10nm technology node, integration with ultra-low κ (ULK) film becomes even more challenging. In comparison to traditional PECVD ULK films introduces pore through deposition with porogen precursor followed by UV or E-beam exposure to generate porosity , a new single precursor based ULK (ultra low κ) film has been formed without porogen and show promising on the sub 10nm technology road map . In this paper, we will use transmission Fourier Transform-Infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and Ellipsometric Porosimetry (EP) etc. to investigate the impact how different UV conditions will modify chemical bondings, film composition, pore structure and porosities. The role of UV in this new type of ULK film formation will be studied while difference UV conditions include UV bulbs and UV curing vacuum ambient etc. Film mechanical properties as well as electrical properties will be thoroughly compared. The interaction with downstream integration process steps, such as plasma induced damage and selectivity to MOCVD cobalt capping will be examined.