AVS 62nd International Symposium & Exhibition
    Applied Surface Science Tuesday Sessions
       Session AS+NS-TuM

Paper AS+NS-TuM13
High Resolution CREM for Electrical Characterization of Thin Oxide Layers

Tuesday, October 20, 2015, 12:00 pm, Room 212D

Session: Chemical/Molecular Information from Sub-micron Features and Materials
Presenter: Hagai Cohen, Weizmann Institute of Science, Israel
Authors: H. Cohen, Weizmann Institute of Science, Israel
A. Givon, Weizmann Institute of Science, Israel
Correspondent: Click to Email
The chemically resolved electrical measurements technique (CREM) has already been proven very useful in studies of nanometric layered structures. CREM exploits the chemical contrast across a studied system to probe the local, domain specific, electrostatic potential in a non-contact manner. As such, its spatial resolution is usually determined by the studied structure itself, other than the probe size; a fact imposing severe limitations when nm, or even sub-nm, resolution is requested. In the present work we show that this inherent limitation can be overcome. Improved CREM resolution is established, with which a principal progress is demonstrated in the access to fine details of the electrical properties of nanometric SiO2 layers grown on SiC substrates.