| AVS 61st International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS1+TF-ThM1 Invited Paper Sputtering Growth of High-Quality ZnO-based Semiconductors for Optoelectronic Applications Naho Itagaki, Kyushu University, Japan |
| 8:40am | PS1+TF-ThM3 Novel Composite Materials Fabricated by Plasma-enhanced CVD of Carboranes and Pyridine or Benzene Robinson James, U. Chiluwal, University of North Texas, E. Echeverria, University of Nebraska-Lincoln, R. Gapfizi, J. Tae, University of North Texas, P.A. Dowben, University of Nebraska-Lincoln, J.A. Kelber, University of North Texas |
| 9:00am | PS1+TF-ThM4 Engineering High-k Dielectric Gate Stacks using In Situ Spectroscopic Ellipsometry Yuanxia Zheng, Penn State University, G.B. Rayner, Kurt J. Lesker Company, A. Agrawal, S. Datta, R. Engel-Herbert, Penn State University |
| 9:20am | PS1+TF-ThM5 Impact of Low Frequency Addition to RF Power in PECVD Process: Case of TiN and GeTe Christophe Vallee, F. Piallat, M. Aoukar, P.D. Szkutnik, LTM - CEA/LETI, France, R. Gassillloud, P. Noé, P. Michallon, CEA, LETI, MINATEC Campus, France |
| 11:00am | PS1+TF-ThM10 Surface Reactions during Ammonia-Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Dennis Hausmann, Lam Research Corporation, R. Ovanesyan, S. Agarwal, Colorado School of Mines |
| 11:20am | PS1+TF-ThM11 Plasma Assisted Atomic Layer Epitaxy of III-N Ternaries for Next Generation Devices Neeraj Nepal, J.K. Hite, V.R. Anderson, V.D. Wheeler, S. Qadri, C.R. Eddy, Naval Research Laboratory |
| 11:40am | PS1+TF-ThM12 Invited Paper Plasma-enhanced Atomic Layer Deposition: Prospects and Challenges Hyungjun Kim, Yonsei University, Korea |