| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM2-WeM1 The Influence of Surface Preparation pre-Atomic Layer Deposition of Al2O3 on GaN Metal Oxide Semiconductor Capacitors Dmitry Zhernokletov, Stanford University |
| 8:20am | EM2-WeM2 Low Voltage Nonlinearity Metal-Insulator-Insulator-Metal (MIIM) Capacitors using Plasma Enhanced Atomic Layer Deposition of SiO2 and Al2O3 Dustin Austin, Oregon State University, D. Allman, D. Price, S. Hose, On Semiconductor, J.F. Conley, Oregon State University |
| 8:40am | EM2-WeM3 Invited Paper Metal-Insulator Transitions, Resistive Switches and Oxide Electronics Shriram Ramanathan, Harvard University |
| 9:20am | EM2-WeM5 Invited Paper Complex Oxide Devices Suman Datta, Penn State University |
| 11:00am | EM2-WeM10 Invited Paper Ferroelectric Devices Alexander Demkov, The University of Texas at Austin |
| 11:40am | EM2-WeM12 Enhanced Performance Metal/Insulator/Insulator/Metal (MIIM) Tunnel Diodes N. Alimardani, JohnF. Conley, Jr., Oregon State University |
| 12:00pm | EM2-WeM13 Assessment of Barrier Heights between ZrCuAlNi Amorphous Metal and SiO2, Al2O3, and HfO2 using Internal Photoemission Spectroscopy Tyler Klarr, Oregon State University, L. Wei, N.V. Nguyen, O.A. Kirillov, National Institute of Standards and Technology (NIST), J. McGlone, J. Wager, J.F. Conley, Oregon State University |