Invited Paper EM2-WeM3
Metal-Insulator Transitions, Resistive Switches and Oxide Electronics

Wednesday, November 12, 2014, 8:40 am, Room 314

There is growing interest in the exploring complex oxide semiconductors as functional elements in solid state devices. this is in part created by the inevitable limits to use of traditional semiconductors in highly scaled devices and also expanding interest in integrating multiple functionalities at the chip-level. Dielectrics with engineered defects and correlated oxides could be potentially interesting in this regard as switchable, adaptive materials for interconnects, logic and memory. There are a number of fundamental issues from the materials and interface aspects that remain poorly understood. For example, how can we develop a quantitative understanding of the electrical aspects of the high-k / correlated oxide interface where in almost all cases, such phase change materials show drastic frequency dependent properties? How can we design gate stacks to modulate carrier density approaching that of metallic state in such oxides? In this presentation, I will address these problems, with emphasis on studies conducted in our laboratory on rutile (e.g. VO2) and perovskite (e.g. SmNiO3) structured oxide thin films that undergo insulator-metal transitions.