| AVS 61st International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | Kyumin Lee, Yonsei University, Korea |
| Authors: | K. Lee, Yonsei University, Korea Y. Kim, Yonsei University, Korea T. Kim, Yonsei University, Korea H. Na, Yonsei University, Korea H. Sohn, Yonsei University, Korea |
| Correspondent: | Click to Email |
In this study, the effect of Mg doping concentration on the resistance switching behavior of Al2O3 films was investigated in conjunction with an analysis of the chemical bonding states. Mg doping concentration is increased from 0 to 8.6% with increasing Mg gun power. In micro-structure, the Al2O3 and Mg-doped Al2O3 films have amorphous structure in all conditions. In non-lattice oxygen, the concentration of non-lattice oxygen is increased with increasing Mg doping concentration in Al2O3 films. In order to identify the effect of only non-lattice oxygen concentration without crystal structure change, the resistance switching characteristics such as operating current, forming electric field, endurance, and retention was compared. The operating current and uniformity of endurance is increased with increasing Mg doping concentration. And also the conduction mechanism and activation energy from Poole-Frenkel equation of resistance switching characteristics of Mg-doped Al2O3 films was investigated. The activation energy is decreased with increasing non-lattice oxygen concentration because non-lattice oxygen is defect in Al2O3 films. From these findings, the resistance switching characteristics are influenced by non-lattice oxygen concentration.