AVS 61st International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP14
Growth and Characterization of Aluminum Oxide for M/I/S Junctions

Thursday, November 13, 2014, 6:00 pm, Room Hall D

Session: Thin Films Poster Session
Presenter: Zachary Barcikowski, University of Maryland, College Park
Authors: Z. Barcikowski, University of Maryland, College Park
J. Pomeroy, National Institute of Standards and Technology (NIST)
Correspondent: Click to Email

In progress towards spin polarization measurements, we are using a unique ultra-high vacuum (UHV) deposition chamber equipped with electron gun deposition sources, sputter deposition, and plasma oxidation to fabricate shadow-mask defined tunnel junctions. The formation of the tunnel barrier is one of the most crucial processes in junction fabrication which makes the development of an optimal growth recipe a vital step. While varying plasma oxidation process parameters, we will be growing aluminum oxide thin films as a tunnel barrier for metal/insulator/superconductor junctions. Optical spectra of the oxidation plasma and electrical characterization of the resulting junctions will be used to elucidate optimum growth conditions for our aluminum oxide tunnel barriers. The aforementioned data and experimental details will be discussed in this presentation.