| AVS 61st International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF+PS-ThM |
| Session: | Advanced CVD and Chemical Vapor Infiltration Methods |
| Presenter: | Pedro Nascente, UFSCar, Brazil |
| Authors: | R.R.M. de Sousa, IFPI, Brazil P.S. Sato, UFSCar, Brazil B.C. Viana, UFPI, Brazil C. Alves Jr, UFRSA, Brazil A. Nishimoto, Kansai University, Japan P.A.P. Nascente, UFSCar, Brazil |
| Correspondent: | Click to Email |
A new technique called cathodic cage plasma deposition (CCPD) was used for growing TiN and TiO2 films on silicon substrate. In this technique, the samples are positioned inside a cage having uniformly distributed round holes with fixed diameter, and onto an alumina insulator disk, so that the plasma acts on the cage and not on the sample surface, eliminating possible defects usually formed during the conventional plasma deposition. The CCPD technique produces films with high uniformity and permits a good control of roughness and crystallinity. The main advantages of this technique are the uniformity, tri-dimensionality, and high rate of deposition of the deposited films, as well as low cost of production.
TiN coatings increase the surface hardness and decrease the friction coefficient, thus enhancing the lifetime of components and tools employed in the metalworking industries. Thin films of TiO2 have attracted considerable attention because of different applications on many fields due to their unique properties, such as chemical stability, no toxicity, low cost, high refraction index, high permittivity, wide valence band, etc. The TiO2 main crystalline phases are: anatase, brookite, and rutile. The TiO2 thin films can have a mixture of these phases showing hybrid properties. Many studies have focused on relationship of the different phases as dependent of the deposition method and parameters. Each one of these phases has its own characteristic properties, leading to different applications.
In this work, the influence of the parameters (temperature and gas atmosphere) in the characteristics of the deposited films was investigated. The TiN and TiO2 thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy in order to identify their crystalline phases and estimate their thicknesses. The combination of XRD and Raman spectroscopy results indicates that only a TiN crystalline phase was detected for the TiN films, and mainly the anastase phase was detected for the TiO2 film. High crystallinity and uniformity of the films were observed by XRD, Raman, and SEM, confirming that this low cost technique is effective in producing high quality TiN and TiO2 films.