| AVS 61st International Symposium & Exhibition | |
| Thin Film | Monday Sessions |
| Session TF+PS+SE-MoM |
| Session: | Advanced PVD Methods |
| Presenter: | Rachel Seibert, Illinois Institute of Technology |
| Authors: | R. Seibert, Illinois Institute of Technology D. Velazquez, Illinois Institute of Technology J. Terry, Illinois Institute of Technology K.A. Terrani, Oak Ridge National Laboratory C. Baldwin, Oak Ridge National Laboratory F. Montgomery, Oak Ridge National Laboratory K. Leonard, Oak Ridge National Laboratory J. Hunn, Oak Ridge National Laboratory P. Schuck, Oak Ridge National Laboratory R. Stoller, Oak Ridge National Laboratory S. Saddow, University of South Florida |
| Correspondent: | Click to Email |
The surface interactions of nuclear fission products with the barrier SiC layer of Tri-Structural Isotropic (TRISO) coated fuel particles limit fuel cell performance. In particular, Pd and Ag reduce the structural integrity of SiC. An understanding of the reaction mechanisms and kinetics of these interactions under normal operation as well as accident conditions is critical for the development of advanced nuclear reactors, but currently is not well understood. This surface chemistry is examined both in spent TRISO fuel on SiC/Si(111) thin films and compared to theoretical calculations done by Schuck and Stoller at Oak Ridge National Laboratory [1]. Synchrotron extended X-ray absorption fine structure (EXAFS) spectroscopy measurements were conducted on the irradiated TRISO fuel pellet to characterize atomic interactions at the Pd K-edge ( 24350 eV). The thin films were grown epitaxially via pulsed laser deposition (PLD), as evidenced by reflection high energy electron diffraction (RHEED) patterns. Pd and Ag were deposited on separate SiC/Si(111) films in thickness increments from 0.5-5 monolayers. The chemical structure of the thin films is analyzed using X-ray photoelectron spectroscopy (XPS).
[1] Schuck, P.C. and R.E. Stoller, Ab initio study of the adsorption, migration, clustering, and reaction of palladium on the surface of silicon carbide. Phys. Rev. B 83, (2011)