| AVS 61st International Symposium & Exhibition | |
| Thin Film | Monday Sessions |
| Session TF+PS+SE-MoM |
| Session: | Advanced PVD Methods |
| Presenter: | Marie-Paule Besland, Institut des Matériaux Jean Rouxel – Université de Nantes, France |
| Authors: | M.-P. Besland, Institut des Matériaux Jean Rouxel – Université de Nantes, France J. Tranchant, Institut des Matériaux Jean Rouxel – Université de Nantes, France E. Janod, Institut des Matériaux Jean Rouxel – Université de Nantes, France C. Benoit, Institut des Matériaux Jean Rouxel – Université de Nantes, France L. Cario, Institut des Matériaux Jean Rouxel – Université de Nantes, France P.Y. Jouan, Institut des Matériaux Jean Rouxel – Université de Nantes, France M. Carette, Institut des Matériaux Jean Rouxel – Université de Nantes, France A. Lafond, Institut des Matériaux Jean Rouxel – Université de Nantes, France R. Meunier, Institut des Matériaux Jean Rouxel – Université de Nantes and Crosslux, France S. Fabert, Institut des Matériaux Jean Rouxel – Université de Nantes and Crosslux, France P.Y. Thoulon, Crosslux Company, France M. Ricci, Crosslux Company, France |
| Correspondent: | Click to Email |
Developing new functionalities mainly depend on the use of new functional material. Nevertheless, prior to envision any development of functional materials towards devices, two major challenges have to be tackled. The former one is to obtain thin layers of active and functional materials. The second challenge is to recover the functional properties on thin layers. For several decades, magnetron sputtering is a widely used deposition technique in microelectronics. Moreover, magnetron sputtering enables to deposit well-crystallized film of insulating or conducting materials, at low temperatures, over large areas, while controlling the film composition and microstructure, even for complex and multi-component materials. Thus, on the basis of well established know-how in deposition process and multi-layered functional structures [1], the deposition of GaV4S8 material in the form of thin layers has been investigated by both non-reactive RF magnetron sputtering and reactive process in Ar/H2S mixture [2]. While the functionality (Resistive switching =RS) was first evidenced on single crystals, our studies demonstrated that metal-insulator-metal (MIM) structures based on GaV4S8 thin layers, deposited by magnetron sputtering, exhibit as well a similar RS [3]. More recently, we focus on the historical chalcogenide absorber for solar cells: CIGSe. We developed a dedicated and home-designed vacuum chamber for CIGSe thin films deposition using “one step sputtering”. In that study, CIGSe thin films were deposited on SLG/Mo substrates by RF magnetron sputtering and then ex-situ annealed under controlled atmosphere. Deposition and annealing parameters can modify both chemical composition and structural properties. In particular, different preferential crystalline orientation may be induced and can modify functional properties in a large extend. Finally, the performances of CIGSe solar cell completely realized by magnetron sputtering technique will be compared to published efficiency values in the 8.9- 10.5 % range [5].
1- C. Duquenne et al. J. Appl. Phys. 104 (2008) 063301; M.P. Besland et al. Thin Solid Films 495 (2006) 86.
2- E. Souchier et al. Thin Solid Films 533 (2013) 54 ; J. Tranchant et al. J. Phys. D: Appl. Phys. 47 (2014) 065309.
3- J. Tranchant et al. Thin Solid Films 533 (2013) 61.
4- J. A. Frantz et al. Thin Solid Films 519 (2011) 776; A.J. Zhou et al. Thin Solid Films 520 (2012) 6068.
5- C. Chen et al. Solar Energy Materials & Solar Cells 103 (2012) 25; Thin Solid Films 535, (2013) 122.