| AVS 61st International Symposium & Exhibition | |
| Scanning Probe Microscopy Focus Topic | Friday Sessions |
| Session SP+AS+BI+EM+NS+SE+SS-FrM |
| Session: | Probe-Sample Interactions and Emerging Instrument Formats |
| Presenter: | Christopher Durcan, University of Albany-SUNY |
| Authors: | C. Durcan, University of Albany-SUNY V.P. LaBella, University at Albany-SUNY |
| Correspondent: | Click to Email |
The W/Si(001) Schottky barrier was spatially mapped using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using high resistivity n-type and p-type silicon substrates. A thin tungsten silicide is observed upon deposition utilizing transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). The sum of the Schottky barrier heights from n-type and p-type silicon substrates agree with the silicon band gap. The BEEM and BHEM spectra are fit utilizing a linearization method to the power law of the BEEM model. Spatially resolved Schottky barrier maps are generated over a 1μm x 1μm area and provide insight into the spatial homogeneity of the barrier height. Histograms of the barrier heights show a Gaussian distribution, consistent with an interface dipole model.