AVS 61st International Symposium & Exhibition
    Materials Characterization in the Semiconductor Industry Focus Topic Tuesday Sessions
       Session MC-TuP

Paper MC-TuP7
The Effect of Aberration Coefficients on Phase Shift in Electronic Optics

Tuesday, November 11, 2014, 6:30 pm, Room Hall D

Session: Poster Session for all areas of Materials Characterization in the Semiconductor Industry
Presenter: Chien-Nan Hsiao, ITRC, NARL, Taiwan, Republic of China
Authors: C.N. Hsiao, ITRC, NARL, Taiwan, Republic of China
J.S. Kao, ITRC, NARL, Taiwan, Republic of China
F.Z. Chen, ITRC, NARL, Taiwan, Republic of China
J.L.A. Yeh, ITRC, NARL, Taiwan, Republic of China
Correspondent: Click to Email
The epitaxial SiGe/Simultiple quantum wells (MQWs) were grown by ultra-high vacuum chemical vapor deposition (UHV-CVD) on a single crystalline silicon (111) substrate. Aberration corrected scanning transmittance electron microscopy equipped the high bright electron gun, DCOR aberration corrector, high angle annular dark field (HAADF) detector, and EDS was used to analysis the atomic structure of SiGe/Si interface. The defocus (C1) and aberration coefficients of electronic optics system such as astigmatism (A1, A2, A3, A5), coma (B2, B4), spherical aberration (C3, C5), and star aberration (S3) were corrected preciously by changing the convergence angle of electron beam probe (18 and 25 mrad). It was found that the distance between dumbbell Si and Ge atoms could be directly measured by the HRSTEM HAADF image. The corresponding FFT shows the point resolution was shown higher point resolution. In addition, the effect of aberration coefficients on phase shift in electronic optic (phase plate) was investigated. Furthermore, the experimental results also demonstrated that simultaneously complementary atomic-resolution EDS line-scan signal in HRSTEM HAADF image. These results provide an effective approach to investigate structural chemical element image in real space at the atomic resolution.