Invited Paper MC+AP+AS-MoM8
LEIS Characterization of the Outer Surface, Ultra-Thin Layers and Contacts

Monday, November 10, 2014, 10:40 am, Room 313

Modern day technologies are increasingly based on high performance nanomaterials and novel preparation techniques for such materials are developed at a rapid pace. Advances in nanoscience and nanotechnology heavily rely on the availability of analytic techniques that can validate and support new nanomaterials synthesis procedures. With the introducing of the Qtac¹⁰⁰, a new high-sensitivity Low Energy Ion Scattering (HS-LEIS) instrument, one can quantitatively analyze the atomic composition of the surface of a wide range of materials with an unparalleled surface sensitivity.

The outermost atoms of a surface largely control processes such as growth, nucleation, poisoning, adhesion and electron emission. While analytic tools (such as XPS) probe an average of many atomic layers, LEIS can selectively analyze the outer atoms. In addition, non-destructive in-depth information, with high depth resolution, is obtained for the heavier elements (0 - 10 nm). HS-LEIS is just as well suited for the quantitative analysis of amorphous, insulating and extremely rough surfaces as for flat single crystals. Since HS-LEIS is a fast analysis technique, it can be used to follow diffusion processes in-situ.

The focus will be on applications where valuable information has been obtained that is impossible (or very difficult) to obtain with other analytical techniques. The unique possibilities will be illustrated with state-of-the-art applications for: ALD growth of ultra-thin layers, surface modification, interface diffusion, core/shell nanoparticles, graphene, self-assembled monolayers for sensors.

The findings will be compared and contrasted to those obtained by other analytic techniques such as XPS, Auger, SIMS, RBS and conventional LEIS.