| AVS 60th International Symposium and Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-TuA1 Invited Paper Plasma Deep Etching of Silicon, Titanium and Gallium Nitride for Microtechnology R. Dussart, GREMI CNRS/Université d'Orléans, France |
| 2:40pm | PS2-TuA3 Simulation of Bosch Process Deep Silicon Etching - A Multi-scale Approach A. Pateau, A. Rhallabi, M.C. Fernandez, Université de Nantes, France, M. Boufnichel, F. Roqueta, STMicroelectronics Tours SAS |
| 3:00pm | PS2-TuA4 Titanium Deep Etching for Medical Applications T. Tillocher, P. Lefaucheux, GREMI CNRS/Université d'Orléans, France, B. Boutaud, Sorin Crm, France, R. Dussart, GREMI CNRS/Université d'Orléans, France |
| 4:00pm | PS2-TuA7 Selection of non-PFC Chemistries for Through-Silicon via Etch K. Chen, T. Kim, J.P. Chang, University of California at Los Angeles |
| 4:20pm | PS2-TuA8 Sub-22nm Node Mask Patterning for Deep Silicon Trench Etch B. Avasarala, S. Lefevre, V. Chakrapani, H. Haga, H. Matsumoto, Q. Yang, Y. Chiba, A. Ko, A. Selino Jr., K. Kumar, P. Biolsi, TEL Technology Center, America, LLC, F.L. Lie, I. Saraf, S. Kanakasabapathy, IBM |
| 4:40pm | PS2-TuA9 Reduction of Aspect Ratio Dependency in Silicon Trench Etch R.L. Bates, University of Texas at Dallas |
| 5:20pm | PS2-TuA11 Reaction Mechanism at the Sidewall of Through Si via (TSV) Etching by SF6/O2/SiF4 Plasma I. Sakai, Toshiba Corporation, Japan, S. Amasaki, T. Takeuchi, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, Nagoya University, Japan, N. Sakurai, H. Hayashi, T. Ohiwa, Toshiba Corporation, Japan, M. Hori, Nagoya University, Japan |