| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | GR+EM+MS+NS+SP-FrM1 Invited Paper Epitaxial Graphene Electronics J.A. Robinson, The Pennsylvania State University |
| 9:00am | GR+EM+MS+NS+SP-FrM3 Direct Transfer of Graphene Devices on Arbitrary Substrates Z. Razavi Hesabi, C.A. Joiner, T. Roy, E.M. Vogel, Georgia Institute of Technology |
| 9:20am | GR+EM+MS+NS+SP-FrM4 1/f Noise in Epitaxial Graphene Field Effect Transistors using Al2O3 and HfO2 High k -Dielectrics H.K. Chan, Newcastle Univ., UK, V.D. Wheeler, U.S. Naval Research Laboratory (NRL), V.K. Nagareddy, Newcastle Univ., UK, L.O. Nyakiti, NRL, A. Nath, George Mason Univ., R.L. Myers-Ward, Z. Robinson, N.Y. Garces, NRL, M.V. Rao, George Mason Univ., J.P. Goss, N.G. Wright, Newcastle Univ., UK, C.R. Eddy, Jr., NRL, A.B. Horsfall, Newcastle Univ., UK, D.K. Gaskill, NRL |
| 9:40am | GR+EM+MS+NS+SP-FrM5 Invited Paper MoS2 MOSFETs: Dielectrics, Metal Contacts and Scaling P.D. Ye, Purdue University |
| 10:20am | GR+EM+MS+NS+SP-FrM7 Broad Band Dielectric Functions of Graphene and MoS2 W. Li, G. Cheng, National Institute of Standards and Technology (NIST), Y. Liang, Peking Univ., China, K. Xu, NIST, A. Boosalis, Univ. of Nebraska-Lincoln, P.D. Ye, Purdue Univ., A.R. Hight Walker, NIST, X. Liang, Peking Univ., China, T. Hofmann, Univ. of Nebraska-Lincoln, C.A. Richter, D.J. Gundlach, N.V. Nguyen, NIST |
| 10:40am | GR+EM+MS+NS+SP-FrM8 Measurement of Charge Doping of Graphene in a Metal/Graphene/Dielectric Sandwich Structure by C-1s Core Level X-ray Photoelectron Spectroscopy A. Dahal, M. Batzill, R. Addou, H. Coy-Diaz, J. Lallo, University of South Florida |