| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Friday Sessions |
| Session GR+EM+MS+NS+SP-FrM |
| Session: | 2D Materials: Device Physics & Applications |
| Presenter: | Z. Razavi Hesabi, Georgia Institute of Technology |
| Authors: | Z. Razavi Hesabi, Georgia Institute of Technology C.A. Joiner, Georgia Institute of Technology T. Roy, Georgia Institute of Technology E.M. Vogel, Georgia Institute of Technology |
| Correspondent: | Click to Email |
The wide-ranging high performance electronic properties of graphene and its ability to be roll-to-roll manufactured, provides an interesting platform for developing high performance, multifunctional electronics on arbitrary substrates such as paper or plastic. However, these substrates are not compatible with conventional high-temperature semiconductor processing. In this work, graphene devices are fabricated on as-synthesized graphene on copper foil using conventional semiconductor device processing techniques. The fully fabricated devices are then transferred onto the substrate of interest (glass, paper, or plastic) using a conventional PMMA-based wet transfer method. The effect of devices designs and processing conditions such as metal contact area and type (top contact versus mixed edge/top contact) on graphene device performance is investigated. The obtained results show that for top contacts, the Dirac point cannot be observed, while for mixed edge/top contacts, the Dirac point is observed. The obtained results suggest metal doping and edge contact can significantly shift the Dirac point. Overall, the results demonstrate a novel method for fabricating high performance graphene devices on arbitrary substrates.
Key words: Graphene, Field Effect Transistor (FET), Direct Transfer