| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM+PS-TuM1 Calibration of Capacitance Force Microscopy using Micro-scale Gold Dots K. Sardashti, A.C. Kummel, University of California San Diego |
| 8:20am | EM+PS-TuM2 RF-PVD Si Capping for CET Decrease in High-h/Metal Gate 14nm FDSOI C. Suarez Segovia, P. Caubet, STMicroelectronics, France, C. Leroux, CEA-LETI, France, M. Juhel, S. Zoll, O. Weber, STMicroelectronics, France, G. Ghibaudo, IMEP-LAHC, France |
| 8:40am | EM+PS-TuM3 Invited Paper Growth of Oxides for Negative Capacitance Gate Dielectrics R. Droopad, Texas State University |
| 9:20am | EM+PS-TuM5 Invited Paper Switching Aspects of RRAM – First Principles and Model Simulations Insight S. Clima, R. Degraeve, K. Sankaran, Y.Y. Chen, A. Fantini, A. Belmonte, L. Zhang, N. Raghavan, L. Goux, B. Govoreanu, D.J. Wouters, M. Jurczak, G. Pourtois, IMEC, Belgium |
| 10:40am | EM+PS-TuM9 Comparison of Surface Defects on Cleaved GaAs(110) and MBE Grown InGaAs(110) M. Edmonds, T. Kent, University of California San Diego, R. Droopad, Texas State University, A.C. Kummel, University of California San Diego |
| 11:00am | EM+PS-TuM10 Scalability of Doped Cubic HfO2 Films C. Adelmann, K. Opsomer, Imec, Belgium, S. Brizzi, M. Tallarida, D. Schmeisser, BTU Cottbus, Germany, T. Schram, S.A. Chew, N. Horiguchi, S. Van Elshocht, L.-A. Ragnarsson, Imec, Belgium |
| 11:20am | EM+PS-TuM11 Invited Paper Advance of 3D-stackable Binary-oxide ReRAM for Storage-class Memory Applications T.H. Hou, C.W. Hsu, I.T. Wang, National Chiao Tung University, Taiwan, Republic of China |