Paper TC+EM+TF-WeM2
Effects of High Pressure on InGaZnO Thin Film
Wednesday, October 30, 2013, 8:20 am, Room 102 B
| Session: |
Oxide and Flexible Electronics |
| Presenter: |
S.H. Yoon, Yonsei University, Republic of Korea |
| Authors: |
S.H. Yoon, Yonsei University, Republic of Korea
Y.J. Tak, Yonsei University, Republic of Korea
D.H. Yoon, Yonsei University, Republic of Korea
U.H. Choi, Yonsei University, Republic of Korea
H.J. Kim, Yonsei University, Republic of Korea
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| Correspondent: |
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Since Hosono et al presented amorphous oxide semiconductor (AOS) thin film transistor (TFTs) in 2004, AOS TFTs have been attracting attention from many researchers for a decade [1]. AOS TFTs have high enough mobility for organic light emitting diodes, and high resolution display. One of the technologies for improving electrical characteristics is high pressure annealing [2,3]. We studied pressure effects on AOS TFTs without additional annealing process. We applied pressure on inverted staggered InGaZnO (IGZO) TFTs. IGZO layer (50nm) was deposited by sputtering. SiO2 layer (200 nm) was deposited by plasma enhanced chemical vapor deposition (PECVD) as a gate insulator and an etch stop layer, respectively. MoW (200 nm) was deposited by sputtering as a gate metal, and Mo was deposited by sputtering as source/drain metal. Applied gas was N2, and applied pressures varied 1MPa, 3 MPa, and 5 MPa for 2 hours, respectively. Figure 1 shows transfer curves on different pressure, and mobility and sub-threshold swing were improved. References:
[1] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488-492 (2004).
[2] K.H. Ji, J.-I. Kim, H.Y. Jung, S.Y. Park, R. Choi, U.K. Kim, C.S. Hwang, D. Lee, H. Hwang, and J.K. Jeong, Appl. Phys. Lett. 98, 103509 (2011).
[3] R.S. Rim, W.H. Jeong, D.L. Kim, H.S. Lim, K.M. Kim, and H.J. Kim, J. Mater. Chem. 22, 12491-12497 (2012).