AVS 60th International Symposium and Exhibition
    Transparent Conductors and Printable Electronics Focus Topic Wednesday Sessions
       Session TC+EM+EN+TF-WeA

Paper TC+EM+EN+TF-WeA4
Surface Modification of ZTO/Al/ZTO Stack Structure using Inductively Coupled Plasma

Wednesday, October 30, 2013, 3:00 pm, Room 102 B

Session: Transparent Conductors and Photovoltaics
Presenter: H.S. Kim, Chung-Ang University, Republic of Korea
Authors: H.S. Kim, Chung-Ang University, Republic of Korea
J.C. Woo, ETRI, Republic of Korea
Y.H. Joo, Chung-Ang University, Republic of Korea
K.R. Choi, Chung-Ang University, Republic of Korea
Y.S. Chun, Chung-Ang University, Republic of Korea
C.I. Kim, Chung-Ang University, Republic of Korea
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Transparent conductive oxide (TCO) is material which simultaneously possesses the properties of electrical conductivity and optical transmission. TCO is a doped metal oxide thin film mainly used in optoelectronic applications such as transparent electrodes in touch panels, flat panel displays (FPDs), and other future devices. Among the new TCO, Zinc tin oxide (ZTO) is a one of very promising candidate. ZTO has the advantage of good stability at high temperature and unlike other popular TCOs such as ITO and Cd-Sn-O, ZTO films do not contain expensive or toxic elements. Another advantage of ZTO is its low sensitivity towards visible light. Moreover, Conductivity of ZTO thin films can be increased by doping of ZTO with aluminum. In many organic and hybrid devices al-doped ZTO thin films are used as the anode or hole transport layer. In order to get excellent device characteristics in OLED applications, efficiency of hole injection is important factor. In this study, the effects of various gases employed of plasma treatments of al-doped ZTO anode surfaces have been studied in an Inductively Coupled Plasma (ICP). The surface modification of al-doped ZTO was studied as a function of the process parameters, including a RF power, a process time and a process pressure. By modifying the surface properties of the al-doped ZTO, the work function of the anode can be considerably varied to alter the hole-injection energy barrier. The work function of the treated al-doped ZTO thin film was investigated by Surface Analyzer (AC-2). The analysis of X-ray Photoelectron Spectroscopy (XPS) was carried out to investigate the chemical reactions between the surface of al-doped ZTO thin films and etch species. Surface morphology of the treated al-doped ZTO was characterized using Atomic Force Microscope. As a result of XPS and AFM analysis, plasma treatment reduces the carbon contamination of al-doped ZTO surface and increases the work function of it.