AVS 60th International Symposium and Exhibition
    Scanning Probe Microscopy Focus Topic Friday Sessions
       Session SP+AS+EM+GR+MI+NS+SS-FrM

Paper SP+AS+EM+GR+MI+NS+SS-FrM10
Schottky Barrier Height Measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) Interfaces Utilizing Ballistic Electron Emission Microscopy and Ballistic Hole Emission Microscopy

Friday, November 1, 2013, 11:20 am, Room 202 C

Session: Probing Electronic and Transport Properties
Presenter: R. Balsano, College of Nanoscale Science and Engineering
Authors: R. Balsano, College of Nanoscale Science and Engineering
V.P. LaBella, College of Nanoscale Science and Engineering
Correspondent: Click to Email
The Schottky barrier heights of both n and p doped Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes were measured using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM), respectively. Measurements using both forward and reverse BEEM and BHEM injection conditions were performed. The Schottky barrier heights were found by fitting to a linearized Bell-Kaiser and Prietsch-Ludeke model. The sum of the n-type and p-type barrier heights are in good agreement with the band gap of silicon and independent of the metal utilized. These findings may help to improve models for Schottky barrier heights of non-epitaxial diodes.