AVS 60th International Symposium and Exhibition
    Plasma Science and Technology Monday Sessions
       Session PS-MoA

Paper PS-MoA11
Effect of NH3/N2 Ratio in Plasma Treatment on Porous Low Dielectric Constant SiCOH Dielectric

Monday, October 28, 2013, 5:20 pm, Room 104 C

Session: Advanced BEOL/Interconnect Etching
Presenter: Y.L. Cheng, National Chi-Nan University, Taiwan, Republic of China
Authors: Y.L. Cheng, National Chi-Nan University, Taiwan, Republic of China
J.F. Huang, National Chi-Nan University, Taiwan, Republic of China
T.C. Bo, National Chi-Nan University, Taiwan, Republic of China
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The influence of N2/NH3 ratio in the plasma treatment on physical, electrical properties and reliability characteristics is investigated in this study. It is found that all the plasma treatments resulted in the formation of a thin and modified layer on the surface of the porous low-k films, and the properties of this modified layer is affected by N2/NH3 ratio in the plasma. Results indicate that pure N2 plasma treatment forms an amide-like layer on the surface, which apparently leads to a higher increase in the dielectric constant. A mixture of N2/NH3 gas plasma treatment induces more moisture uptake on the low-k dielectric’s surface, which degrade the electrical performance and reliability. Among N2/NH3 gas plasma treatment, plasma-treated low-k dielectric has better electrical and reliability characteristics as N2/NH3 gas ratio equals to 1.