AVS 60th International Symposium and Exhibition
    In Situ Spectroscopy and Microscopy Focus Topic Thursday Sessions
       Session IS-ThP

Paper IS-ThP1
Scanning Tunneling Microscopy of the Topological Crystalline Insulator SnTe

Thursday, October 31, 2013, 6:00 pm, Room Hall B

Session: In Situ Microscopy and Spectroscopy Poster session
Presenter: D. Zhang, NIST and University of Maryland
Authors: D. Zhang, NIST and University of Maryland
J. Ha, NIST and University of Maryland
H. Baek, NIST and Seoul National University, Republic of Korea
Y. Kuk, Seoul National University, Republic of Korea
J.A. Stroscio, Center for Nanoscale Science and Technology, NIST
Correspondent: Click to Email
Recently, the topological classification of electronics states has been extended to a new class of matter called topological crystalline insulators. In contrast to topological insulators characterized by time reversal symmetry protected surface states with an odd number of Dirac cones, topological crystalline insulators arise from crystal symmetry and are characterized by surface states with an even number of Dirac cones. Here, we report in-situ low temperature scanning tunneling microscopy study of SnTe (001) surfaces grown by molecular beam epitaxy. SnTe high symmetry surfaces have been recently predicted and experimentally confirmed as hosting topological crystalline insulator surface states [1-3]. The growth of SnTe on multilayer graphene/SiC substrates is shown to produce SnTe (001) nanoplates with varying densities of Sn vacancies. The topological surface states on the SnTe (001) surface in these nanoplates were probed by scanning tunneling spectroscopic mapping. In this poster we discuss the spectroscopic mapping results in terms of scattering in Fermi surface contours of the topological surface states.

[1] T. H. Hsieh, et al., Nat. Comm. 3, 982 (2012).

[2] Y. Tanaka, et al., Nat. Phys. 8, 800 (2012).

[3] S.-Y. Xu, et al., Nat. Comm. 3, 1192 (2012).