| AVS 60th International Symposium and Exhibition | |
| Helium Ion Microscopy Focus Topic | Thursday Sessions |
| Session HI-ThP |
| Session: | Aspects of Helium Ion Microscopy Poster Session |
| Presenter: | G. Hlawacek, University of Twente, Netherlands |
| Authors: | G. Hlawacek, University of Twente, Netherlands V. Veligura, University of Twente, Netherlands R. van Gastel, University of Twente, Netherlands H.J.W. Zandvliet, University of Twente, Netherlands B. Poelsema, University of Twente, Netherlands |
| Correspondent: | Click to Email |
Defects are an unavoidable and often unwanted side product of Helium Ion Microscopy (HIM). We will discuss the role of defects and try to show examples of their useful application.
Point defects created using HIM can be analyzed in-situ using ionoluminescence. However, such point defects can also be exploited to create areas with specific optical properties, in particular areas that either absorb light or emit light of a certain wavelength when exited.
Going beyond normally used ion doses allows to investigate defect agglomeration, blister formation and the subsequent surface restructuring. We present examples of materials modification at doses starting from 1x1017cm-2 up to 1x1022 cm-2. Examples of surface structures formed under extreme ion fluencies at different temperatures will be presented for a wide range of materials including technological relevant materials for nuclear applications.
This research is supported by the Dutch Technology Foundation STW, which is the applied science division of NWO, and the Technology Programme of the Ministry of Economic Affairs.