| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM-WeA |
| Session: | III-V Devices and Tunnel FETs |
| Presenter: | E. Tutuc, The University of Texas at Austin |
| Authors: | K. Lee, The University of Texas at Austin K. Kim, The University of Texas at Austin B. Fallahazad, The University of Texas at Austin S. Larentis, The University of Texas at Austin M.S. Points, The University of Texas at Austin E. Tutuc, The University of Texas at Austin |
| Correspondent: | Click to Email |
We discuss the realization of vertical heterostructures consisting of two-dimensional materials, such as graphene and transition metal dichalcogenides, using a layer-by-layer transfer approach. We demonstrate double layer heterostructures consisting of two graphene layers separated by a thin hexagonal boron nitride dielectric, with layer mobilities as high as 200,000 cm2/Vs. We discuss the in-plane electron transport as a function of temperature and in magnetic fields, as well as the tunneling between the two layers, which can be used as basis for vertical field-effect transistors.