| AVS 59th Annual International Symposium and Exhibition | |
| Transparent Conductors and Printable Electronics Focus Topic | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | TC+EM+AS+TF+EN-ThM2 High Conductivity in Thin ZnO:Al Deposited by Means of the Expanding Thermal Plasma Chemical Vapor Deposition K. Sharma, H.C.M. Knoops, M.V. Ponomarev, Eindhoven University of Technology, The Netherlands, R. Joy, M. Velden, D. Borsa, R. Bosch, Roth and Rau BV, Germany, W.M.M. Kessels, M. Creatore, Eindhoven University of Technology, The Netherlands |
| 8:40am | TC+EM+AS+TF+EN-ThM3 Invited Paper Recent Progress in Oxide Semiconductors and Oxide TFTs H. Hosono, Tokyo Institute of Technology, Japan |
| 9:20am | TC+EM+AS+TF+EN-ThM5 Surface Functionalization of Amorphous Zinc Tin Oxide Thin Film Transistors G.S. Herman, M.S. Rajachidambaram, Oregon State University, A. Pandey, S. Vilayurganapathy, P. Nachimuthu, S. Thevuthasan, Pacific Northwest National Laboratory |
| 9:40am | TC+EM+AS+TF+EN-ThM6 Work Function and Valence Band Structure of Oxide Semiconductors and Transparent Conducting Oxides Grown by Atomic Layer Deposition A. Yanguas-Gil, Argonne National Laboratory, R.T. Haasch, University of Illinois at Urbana Champaign, J.A. Libera, J.W. Elam, Argonne National Laboratory |
| 10:40am | TC+EM+AS+TF+EN-ThM9 Invited Paper Low Temperature, High Performance Solution-Processed Metal Oxide Thin Film Transistors formed by a ‘Sol-Gel on Chip’ Process H. Sirringhaus, University of Cambridge, UK |
| 11:20am | TC+EM+AS+TF+EN-ThM11 In Situ Measurements of Interface States and Junction Electrical Properties of Electrically Biased Metal / β-Ga2O3 Structures H. Pham, X. Zheng, B. Krueger, M.A. Olmstead, F.S. Ohuchi, University of Washington |
| 11:40am | TC+EM+AS+TF+EN-ThM12 Atmospheric Pressure Dielectric Barrier Discharge (DBD) Post Annealing of Aluminium Doped Zinc Oxide (AZO) Films Y.L. Wu, E. Ritz, J. Hong, T.S. Cho, D.N. Ruzic, University of Illinois at Urbana Champaign |