| AVS 59th Annual International Symposium and Exhibition | |
| Transparent Conductors and Printable Electronics Focus Topic | Thursday Sessions |
| Session TC+EM+AS+TF+EN-ThM |
| Session: | Transparent Conductors and Devices |
| Presenter: | A. Yanguas-Gil, Argonne National Laboratory |
| Authors: | A. Yanguas-Gil, Argonne National Laboratory R.T. Haasch, University of Illinois at Urbana Champaign J.A. Libera, Argonne National Laboratory J.W. Elam, Argonne National Laboratory |
| Correspondent: | Click to Email |
Atomic Layer Deposition offers a low-temperature, scalable route to the synthesis of a wide range of oxide semiconductors and transparent conducting oxides both in flat and high aspect ratio surfaces. We have carried out studies on the influence of concentration and spatial distribution on the electrical properties within the ZnO-SnO2-In2O3 compositional map, including standard TCO materials such as Al:ZnO and ITO. We will present results on the work function and valence band structure of transparent conducting oxides grown by ALD using ex-situ UPS measurements, including the influence of the surface termination on the interfacial properties of the materials. Finally, the ability of ALD to tailor the surface and interfacial properties of TCOs based on its layer-by-layer nature will be discussed.