| AVS 59th Annual International Symposium and Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-TuA1 Surface Interaction Mechanisms Enabling Plasma-Enhanced Strongly Time-Dependent Etching Rates D. Metzler, E. Vogli, F. Hilpert, G.S. Oehrlein, University of Maryland |
| 2:20pm | PS2-TuA2 Reactive Etching or Deposition Properties of Silicon Halide Ions in Gate Etching Processes T. Ito, K. Karahashi, S. Hamaguchi, Osaka University, Japan |
| 2:40pm | PS2-TuA3 Cl Atom Reactions on Silicon Oxy-Chloride Layers Deposited on Chamber Walls in Chlorine-Oxygen Plasmas A.K. Srivastava, University of Houston, R. Khare, Lam Research Corp, V.M. Donnelly, University of Houston |
| 3:00pm | PS2-TuA4 Molecular Dynamic Simulation of Possible Damage Formation at Vertical Walls of finFET Devices during Plasma Etching Processes K. Mizotani, M. Isobe, S. Hamaguchi, Osaka University, Japan |
| 4:00pm | PS2-TuA7 Invited Paper Real time In Situ Electron Spin Resonance (ESR) Study of Free Radicals on Materials Created by Plasmas K. Ishikawa, Nagoya University, Japan, H. Horibe, Kanazawa Institute of Technology, Japan, M. Ito, Meijo University, Japan, M. Sekine, M. Hori, Nagoya University, Japan |
| 4:40pm | PS2-TuA9 Roles of Hydrogen for Hydrofluorocarbon (HFC) Plasma Etching of Silicon Nitride (SiN) S. Hamaguchi, K. Miyake, K. Mizotani, M. Isobe, T. Ito, K. Karahashi, Osaka University, Japan, M. Fukasawa, T. Tatsumi, Sony Corporation, Japan |
| 5:00pm | PS2-TuA10 Molecular Dynamics Analysis of Si Etching with Cl and Br Beams: Ion Incident Angle and Neutral Radical Flux Dependence N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, K. Ono, Kyoto University, Japan |
| 5:20pm | PS2-TuA11 Controlling Correlations Between Ion and UV/VUV Photon Fluxes in Low Pressure Plasma Materials Processing P. Tian, M.J. Kushner, University of Michigan |
| 5:40pm | PS2-TuA12 Formation Mechanisms of Nanoscale Surface Roughness and Rippling during Plasma Etching and Sputtering of Si under Oblique Ion Incidence H. Tsuda, Y. Takao, K. Eriguchi, K. Ono, Kyoto University, Japan |