AVS 59th Annual International Symposium and Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP7
Influence of Substrate Temperature on the Microstructure and Surface Morphology of Pulsed DC Magnetron Sputtered ZrB2 Films

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Thin Film Poster Session
Presenter: C.T. Lee, Instrument Technology Research Center, Taiwan, Republic of China
Authors: C.T. Lee, Instrument Technology Research Center, Taiwan, Republic of China
W.C. Chen, Instrument Technology Research Center, Taiwan, Republic of China
Correspondent: Click to Email
The ZrB2 films were prepared on Si(100) substrate by pulsed DC magnetron sputtering with ZrB2 target. Effects of substrate temperature (from 400 ℃ to 550 ℃ ) on the microstructure and surface roughness of ZrB2 films were investigated by X-ray diffraction, field emission scanning electron microscopy and atomic force microscopy. X-ray diffraction analysis reveals that ZrB2 film was polycrystalline with (001) and (101) orientation when substrate temperature was 450 ℃ . However, the ZrB2 film has preferred orientation along (001) when substrate temperature was above 500 ℃ . An increase in average grain size with increase of substrate temperature was observed. The average grain size of ZrB2 film was increased from 6.2 nm to 15 nm as substrate temperature increased from 400 ℃ to 550 ℃ . In this study, the preferred orientation along (001) of ZrB2 films on Si(100) substrate can be obtained at substrate temperature above 500 ℃ by pulsed DC magnetron sputtering.