| AVS 59th Annual International Symposium and Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Film Poster Session |
| Presenter: | L.A. Hernández-Hernández, ESFM-IPN, Mexico |
| Authors: | L.A. Hernández-Hernández, ESFM-IPN, Mexico A. Hernández-Hernández, CINVESTAV-IPN, Mexico F. De Moure-Flores, CINVESTAV-IPN, Mexico J.G. Quiñones-Galván, CINVESTAV-IPN, Mexico J.J. Araiza-Ibarra, UAF-UAZ, Mexico M. Meléndez-Lira, CINVESTAV-IPN, Mexico |
| Correspondent: | Click to Email |
Nitrogen doped zinc oxide thin films were deposited on glass and silicon substrates by reactive magnetron RF sputtering of zinc in a N2O–Ar ambient. The deposition conditions were optimized varying the substrate temperature and the N2O/Ar sputtering gas ratio. Representative films were studied employing structural, optical and spectroscopic techniques. A correlation between the nitrous oxide partial pressure, the chemical composition and the crystalline structure of the films was obtained. Stoichiometric and highly oriented ZnO thin films along the (0 0 2) crystallographic direction were obtained for a nitrous oxide partial pressure of ~33%. Lower temperatures produced samples with higher nitrogen content and slightly higher band-gap energy. Post-deposition annealing treatments in nitrous oxide atmosphere at 500 °C significantly improved the crystallinity of the samples as confirmed by x-ray diffraction.
† : partially funded by CONACyT-Mexico and ICYT-DF.